Additional Homework Problems

CDP7-F_B

GaInAs films are important materials in fiber optic communication and in high-speed microelectronic devices. A preliminary reaction between triethylindium and arsine is carried out to form an intermediate, which is then used in the deposition to form GaInAs. The reaction is

Et₃In(g)+AsH₃(g) adduct(g)

The data in the table below were obtained in a plug-flow reactor [JECS, 135(6), 1530 (1988)]. Total pressure (including inerts)=152.0 torr.

Find a rate law consistent with the experimental data.